BAS29_D87Z【PDF 1/2 页】DIODE GEN PURP 120V 200MA SOT23

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BAS29

?2002 Fairchild Semiconductor Corporation

BAS29, Rev. A

BAS29

Small Signal Diode

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

SOT-23

L20

Absolute Maximum Ratings*

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

VRRM

Maximum Repetitive Reverse Voltage 120 V

IF(AV)

Average Rectified Forward Current 200 mA

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Pulse Width = 1.0 microsecond

1.0

2.0

Tstg

Storage Temperature Range -55 to +150

°C

Operating Junction Temperature 150

°C

Thermal Characteristics

Electrical Characteristics

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Power Dissipation 350 mW

RθJA

Thermal Resistance, Junction to Ambient 357

°C/W

Symbol

Parameter

Test Conditions

Min

Max

Units

Breakdown Voltage

IR = 1.0 mA 120

VF* Forward Voltage IF = 10 mA

IF = 50 mA

IF = 100 mA

IF = 200 mA

IF = 400 mA

0.75

0.84

0.90

1.00

1.25

IR* Reverse Current VR = 90 V

100

VR = 90 V, TA = 150°C

100

μA

Total Capacitance

VR = 0, f = 1.0 MHz

2.0 pF

trr

Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA,

RL = 100 ?

50 ns

*Pulse test : Pulse width=300us, Duty Cycle=2%

Connection Diagram

2NC

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